- Supports NVM command
- SLC caching technology
- Built-in LDPC ECC functionality
- Dynamic thermal throttling
The MTE662T2 features 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. The MTE662T2 is fully tested to guarantee reliability in mission-critical applications.